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BUL45 NPN Silicon Power Transistor
High Voltage SWITCHMODEt Series
Designed for use in electronic ballast (light ballast) and in Switchmode Power supplies up to 50 Watts.
Features http://onsemi.com
* Improved Efficiency Due to:
Low Base Drive Requirements (High and Flat DC Current Gain hFE) Low Power Losses (On-State and Switching Operations) Fast Switching: tfi = 100 ns (typ) and tsi = 3.2 ms (typ) @ IC = 2.0 A, IB1 = IB2 = 0.4 A Full Characterization at 125C Tight Parametric Distributions Consistent Lot-to-Lot Pb-Free Package is Available*

POWER TRANSISTOR 5.0 AMPERES, 700 VOLTS, 35 AND 75 WATTS
* * *
MAXIMUM RATINGS
Rating Collector-Emitter Sustaining Voltage Collector-Base Breakdown Voltage Emitter-Base Voltage Collector Current Base Current Total Device Dissipation @ TC = 25_C Derate above 25C Operating and Storage Temperature - Continuous - Peak (Note 1) Symbol VCEO VCES VEBO IC ICM IB PD TJ, Tstg Value 400 700 9.0 5.0 10 2.0 75 0.6 -65 to 150 Unit Vdc Vdc Vdc Adc Adc W W/_C _C 1 2 3
TO-220AB CASE 221A-09 STYLE 1
MARKING DIAGRAM
BUL45G AY WW
THERMAL CHARACTERISTICS
Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RqJC RqJA Max 1.65 62.5 Unit _C/W _C/W
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%.
BUL45 A Y WW G
= Device Code = Assembly Location = Year = Work Week = Pb-Free Package
ORDERING INFORMATION
Device BUL45 BUL45G *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
(c) Semiconductor Components Industries, LLC, 2006
Package TO-220 TO-220 (Pb-Free)
Shipping 50 Units / Rail 50 Units / Rail
1
February, 2006 - Rev. 7
Publication Order Number: BUL45/D
BUL45
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH) Collector Cutoff Current (VCE = Rated VCEO, IB = 0) Collector Cutoff Current (VCE = Rated VCES, VEB = 0) (TC = 125C) Emitter Cutoff Current (VEB = 9.0 Vdc, IC = 0) ON CHARACTERISTICS Base-Emitter Saturation Voltage (IC = 1.0 Adc, IB = 0.2 Adc) (IC = 2.0 Adc, IB = 0.4 Adc) Collector-Emitter Saturation Voltage (IC = 1.0 Adc, IB = 0.2 Adc) (TC = 125C) Collector-Emitter Saturation Voltage (IC = 2.0 Adc, IB = 0.4 Adc) (TC = 125C) DC Current Gain (IC = 0.3 Adc, VCE = 5.0 Vdc) (TC = 125C) (IC = 2.0 Adc, VCE = 1.0 Vdc) (TC = 125C) (IC = 10 mAdc, VCE = 5.0 Vdc) DYNAMIC CHARACTERISTICS Current Gain Bandwidth (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 8.0 Vdc) (IC = 1.0 Adc IB1 = 100 mAdc VCC = 300 V) (IC = 2.0 Adc IB1 = 400 mAdc VCC = 300 V) 1.0 ms 3.0 ms 1.0 ms 3.0 ms (TC = 125C) (TC = 125C) (TC = 125C) (TC = 125C) ton toff VCE (Dyn sat) fT Cob Cib - - - - - - - - - - - 12 50 920 1.75 4.4 0.5 1.0 1.85 6.0 0.5 1.0 -- 75 1200 - - - - - - - - Vdc MHz pF pF VBE(sat) - - VCE(sat) VCE(sat) hFE - - - - 14 - 7.0 5.0 10 0.84 0.89 0.175 0.150 0.25 0.275 - 32 14 12 22 1.2 1.25 0.25 - 0.4 - 34 - - - - Vdc Vdc - Vdc VCEO(sus) ICEO ICES IEBO 400 - - - - - - - - - - 100 10 100 100 Vdc mAdc mAdc mAdc Symbol Min Typ Max Unit
Dynamic Saturation Voltage: Determined 1.0 ms and 3.0 ms respectively after rising IB1 reaches 90% of final IB1 (see Figure 18)
SWITCHING CHARACTERISTICS: Resistive Load Turn-On Time Turn-Off Time (IC = 2.0 Adc, IB1 = IB2 = 0.4 Adc Pulse Width = 20 ms, (TC = 125C) Duty Cycle < 20% VCC = 300 V (TC = 125C) - - - - 75 120 2.8 3.5 110 - 3.5 - ns ms
SWITCHING CHARACTERISTICS: Inductive Load (VCC = 15 Vdc, LC = 200 mH, Vclamp = 300 Vdc) Fall Time Storage Time (TC = 125C) Crossover Time (TC = 125C) Fall Time Storage Time (TC = 125C) Crossover Time (TC = 125C) Fall Time Storage Time Crossover Time (IC = 2.0 Adc, IB1 = 250 mAdc IB2 = 2.0 Adc) (TC = 125C) (TC = 125C) (TC = 125C) tfi tsi tc tc (IC = 1.0 Adc, IB1 = 100 mAdc IB2 = 0.5 Adc) (TC = 125C) tfi tsi tc (IC = 2.0 Adc, IB1 = 0.4 Adc IB2 = 0.4 Adc) tfi (TC = 125C) tsi 70 - 2.6 - - - - - - - - - - - - - 200 - 4.2 230 400 110 100 1.1 1.5 170 170 80 0.6 175 170 - 3.8 - 350 - 150 - 1.7 - 250 - 120 0.9 300 ns ms ns ns ms ns ns ms ns
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BUL45
TYPICAL STATIC CHARACTERISTICS
100 TJ = 25C hFE , DC CURRENT GAIN TJ = 125C VCE = 1 V hFE , DC CURRENT GAIN TJ = 125C 100 TJ = 25C VCE = 5 V
TJ = -20C 10
TJ = -20C 10
1 0.01
0.10
1.00
10.00
1 0.01
0.10
1.00
10.00
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
Figure 1. DC Current Gain @ 1 Volt
2.0 TJ = 25C VCE , VOLTAGE (VOLTS) 1.5 VCE , VOLTAGE (VOLTS) 10
Figure 2. DC Current Gain at @ 5 Volts
1.0
1.0
1 A 1.5 2A A
3A
4A 5A
6A
0.1
IC/IB = 10 IC/IB = 5 TJ = 25C TJ = 125C 0.10 1.00 10.00
0.5 IC = 0.5 A 0 0.01
0.10
1.00
10.00
0.01 0.01
IB, BASE CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
Figure 3. Collector-Emitter Saturation Region
Figure 4. Collector-Emitter Saturation Voltage
1.1 1.0 VBE , VOLTAGE (VOLTS) 0.9 0.8 0.7 0.6 0.5 0.4 0.01 0.10 1.00 TJ = 25C
10000 Cib TJ = 25C f = 1 MHz
C, CAPACITANCE (pF)
1000
100
Cob
TJ = 125C
10 IC/IB = 10 IC/IB = 5 10.00 1 1 10 100 1000
IC, COLLECTOR CURRENT (AMPS)
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. Base-Emitter Saturation Region
Figure 6. Capacitance
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BUL45
TYPICAL SWITCHING CHARACTERISTICS (IB2 = IC/2 for all switching)
1200 1000 800 t, TIME (ns) 600 400 200 0 0 1 2 3 4 5 6 7 8 IC, COLLECTOR CURRENT (AMPS) IC/IB = 10 IB(off) = IC/2 VCC = 300 V PW = 20 ms 3000 TJ = 25C TJ = 125C 2500 2000 IC/IB = 10 1500 1000 500 0 IC/IB = 5 TJ = 25C TJ = 125C IB(off) = IC/2 VCC = 300 V PW = 20 ms
t, TIME (ns)
IC/IB = 5
0
1
2
3
4
5
6
7
8
IC, COLLECTOR CURRENT (AMPS)
Figure 7. Resistive Switching, ton
Figure 8. Resistive Switching, toff
3500 3000 2500 t, TIME (ns) 2000 1500 1000 500 0 0 TJ = 25C TJ = 125C 1 2 IC/IB = 5 VZ = 300 V VCC = 15 V IB(off) = IC/2 LC = 200 mH
3500 3000 t si , STORAGE TIME (ns) 2500 2000 1500 1000 IC/IB = 10 3 4 5 500 IC = 2 A 3 4 5 6 7 8 9 10 11 12 TJ = 25C TJ = 125C
IB(off) = IC/2 LC = 200 mH VZ = 300 V VCC = 15 V
IC = 1 A
13
14
15
IC, COLLECTOR CURRENT (AMPS)
hFE, FORCED GAIN
Figure 9. Inductive Storage Time, tsi
Figure 10. Inductive Storage Time, tsi(hFE)
300 250 200 t, TIME (ns) t, TIME (ns) 150 100 50 0 VCC = 15 V IB(off) = IC/2 LC = 200 mH VZ = 300 V 0 1 tc
200 tc
150
100
50 tfi TJ = 25C TJ = 125C 5
IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 mH 0 1
tfi
2 3 4 IC, COLLECTOR CURRENT (AMPS)
0
TJ = 25C TJ = 125C 5
2 3 4 IC, COLLECTOR CURRENT (AMPS)
Figure 11. Inductive Switching, tc & tfi, IC/IB = 5
Figure 12. Inductive Switching, tc & tfi, IC/IB = 10
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BUL45
TYPICAL SWITCHING CHARACTERISTICS (IB2 = IC/2 for all switching)
150 140 130 t fi , FALL TIME (ns) 120 110 100 90 80 70 3 4 IC = 2 A 5 6 7 8 9 10 11 12 13 14 15 IC = 1 A TJ = 25C TJ = 125C IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 mH 300 VCC = 15 V VZ = 300 V IB(off) = IC/2 LC = 200 mH
t c , CROSSOVER TIME (ns)
250 IC = 1 A 200
150
100 50 TJ = 25C TJ = 125C 3 4 5 6 7 8 IC = 2 A 9 10 11 12 13 14 15
hFE, FORCED GAIN
hFE, FORCED GAIN
Figure 13. Inductive Fall Time, tfi(hFE)
Figure 14. Crossover Time
GUARANTEED SAFE OPERATING AREA INFORMATION
100 I C , COLLECTOR CURRENT (AMPS) I C , COLLECTOR CURRENT (AMPS) DC (BUL45) 10 5 ms 1 ms 50 ms 10 ms 1 ms 6 5 4 3 2 1 0 300 VBE(off) = 0 V -1.5 V 800 -5 V TC 125C IC/IB 4 LC = 500 mH
1.0
EXTENDED SOA
0.1
0.01 10
100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
1000
400 700 500 600 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 15. Forward Bias Safe Operating Area
Figure 16. Reverse Bias Switching Safe Operating Area There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 15 is based on TC = 25C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC 25C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown in Figure 15 may be found at any case temperature by using the appropriate curve on Figure 17. TJ(pk) may be calculated from the data in Figures 20. At any case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. For inductive loads, high voltage and current must be sustained simultaneously during turn-off with the base-to-emitter junction reverse-biased. The safe level is specified as a reverse-biased safe operating area (Figure 16). This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode.
1.0 POWER DERATING FACTOR 0.8 SECOND BREAKDOWN DERATING
0.6 0.4 THERMAL DERATING
0.2 0 20
40
60
80
100
120
140
160
TC, CASE TEMPERATURE (C)
Figure 17. Forward Bias Power Derating
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BUL45
5 4 3 2 VOLTS 1 0 -1 -2 -3 -4 -5 0
10 VCE dyn 1 ms dyn 3 ms 9 8 7 6 5 4 90% IB 1 ms IB 1 2 3 ms 3 4 TIME 5 6 7 8 3 2 1 0 0 1 2 3 4 TIME 5 6 7 8 IB 90% IB1 VCLAMP 10% VCLAMP IC tsi tc 10% IC 90% IC tfi
Figure 18. Dynamic Saturation Voltage Measurements
+15 V 1 mF 100 W 3W MTP8P10
Figure 19. Inductive Switching Measurements
100 mF VCE PEAK MTP8P10 VCE RB1 Iout A IB IB2 IB1
IC PEAK
150 W 3W
MPF930 MUR105 +10 V MPF930
50 W COMMON 500 mF 150 W 3W
MJE210 MTP12N10
RB2 V(BR)CEO(sus) L = 10 mH RB2 = VCC = 20 VOLTS IC(pk) = 100 mA INDUCTIVE SWITCHING L = 200 mH RB2 = 0 VCC = 15 VOLTS RB1 SELECTED FOR DESIRED IB1 RBSOA L = 500 mH RB2 = 0 VCC = 15 VOLTS RB1 SELECTED FOR DESIRED IB1
1 mF -Voff
Table 1. Inductive Load Switching Drive Circuit
r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED)
TYPICAL THERMAL RESPONSE
1.00 D = 0.5 0.2 0.10 0.1 0.05 0.02 SINGLE PULSE 0.01 0.01 0.10 1.00 t, TIME (ms) P(pk) t1 t2 DUTY CYCLE, D = t1/t2 10.00 RqJC(t) = r(t) RqJC RqJC = 2.5C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RqJC(t) 100.00 1000.00
Figure 20. Typical Thermal Response (ZqJC(t)) for BUL45
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BUL45
The BUL45 Bipolar Power Transistors were specially designed for use in electronic lamp ballasts. A circuit designed by ON Semiconductor applications was built to demonstrate how well these devices operate. The circuit and detailed component list are provided below.
22 mF C1 D10
385 V
MUR150 D3
IC
Q1 47 W
D5 1000 V
C5
400 V 0.1 mF
D9
470 kW
1W
T1A
15 mF C4 TUBE
T1B D8 D7 D1 1N4007 IC C2 CTN AC LINE 220 V 0.1 mF 100 V D2 1N5761 1W MUR150 D4 5.5 mH D6 Q2 47 W L C3 1000 V 10 nF C6 400 V 0.1 mF
FUSE
Components Lists
Q1 D1 D2 D3 D5 D7 CTN L = = = = = = = = Q2 = BUL45 Transistor 1N4007 Rectifier 1N5761 Rectifier D4 = MUR150 D6 = MUR105 D8 = D9 = D10 = 1N400 47 W @ 25C RM10 core, A1 = 400, B51 (LCC) 75 turns, wire = 0.6 mm FT10 toroid, T4A (LCC) Primary: 4 turns Secondaries: T1A: 4 turns Secondaries: T1B: 4 turns All resistors are 1/4 Watt, 5% R1 = 470 kW R2 = R3 = 47 W R4 = R5 = 1 W (these resistors are optional, and might be replaced by a short circuit) C1 = 22 mF/385 V C2 = 0.1 mF C3 = 10 nF/1000 V C4 = 15 nF/1000 V C5 = C6 = 0.1 mF/400 V
T1 =
NOTES: 1. Since this design does not include the line input filter, it cannot be used "as-is" in a practical industrial circuit. 2. The windings are given for a 55 Watt load. For proper operation they must be re-calculated with any other loads.
Figure 21. Application Example
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BUL45
PACKAGE DIMENSIONS
TO-220AB CASE 221A-09 ISSUE AA
-T- B
4
SEATING PLANE
F T S
C
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 BASE COLLECTOR EMITTER COLLECTOR MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04
Q
123
A U K
H Z L V G D N R J
STYLE 1: PIN 1. 2. 3. 4.
SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT: N. American Technical Support: 800-282-9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Phone: 81-3-5773-3850 Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative.
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BUL45/D

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